Technical Details

• Memory Size 4Tbit
• Memory Type Non-Volatile
• Operating Temperature 0°C ~ 70°C (TA)
• Voltage - Supply 2.7V ~ 3.6V
• Technology FLASH - NAND (TLC)
• Memory Format FLASH
• Memory Interface Parallel
• Memory Organization 512G x 8
• DigiKey Programmable Not Verified
• ECCN OBSOLETE
• HTSUS 8542.32.0071
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected