Technical Details

• Memory Size 8Gbit (NAND), 4Gbit (LPDRAM)
• Memory Type Non-Volatile, Volatile
• Operating Temperature -40°C ~ 85°C (TA)
• Voltage - Supply 1.7V ~ 1.9V
• Technology FLASH - NAND, Mobile LPDRAM
• Clock Frequency 208 MHz
• Memory Format FLASH, RAM
• Memory Interface Parallel
• Memory Organization 512M x 16 (NAND), 128M x 32 (LPDRAM)
• DigiKey Programmable Not Verified
• ECCN 3A991B1A
• HTSUS 8542.32.0071
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant